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Transistor (A564, PNP)

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  • The rest of this article will discuss PNP characteristics and applications.
  • As shown above, a PNP transistor’s emitter and collector are formed via p-type doping.
  • This means that most of the charge carriers in a PNP are holes.

500 Ks

In stock

In Stock (SKU : EAP-001267)
  • Type : A564
  • Maximum Collector Power Dissipation (Pc): 0.4 W
  • Maximum Collector-Base Voltage |Vcb|: 25 V
  • Maximum Collector-Emitter Voltage |Vce|: 25 V
  • Maximum Emitter-Base Voltage |Veb|: 7 V
  • Maximum Collector Current |Ic max|: 0.1 A
  • Max. Operating Junction Temperature (Tj): 150 °C
  • Collector Capacitance (Cc): 3.5 pF
  • Forward Current Transfer Ratio (hFE), MIN: 130
  • Package: TO92
SKU: EAP-001267 Categories: , , Tags: ,

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